Lorenzo Ceccarelli

According to our database, Lorenzo Ceccarelli authored at least 6 papers between 2017 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Effect of short-circuit stress on the degradation of the SiO₂ dielectric in SiC power MOSFETs.

Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli

Microelectron. Reliab., 2018

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules.

H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli

Microelectron. Reliab., 2018

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter.

Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo

Microelectron. Reliab., 2018

An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation.

Md Maksudul Hossain, Lorenzo Ceccarelli, Arman Ur Rashid, Ramchandra M. Kotecha, H. Alan Mantooth

Proceedings of the IECON 2018, 2018

2017

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis.

Lorenzo Ceccarelli, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg

Microelectron. Reliab., 2017

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions.

Lorenzo Ceccarelli, Paula Diaz Reigosa, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg

Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017