Luwei Qi

According to our database, Luwei Qi authored at least 3 papers between 2016 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2020

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO₂/TiN-capping/TiAl gate stacks.

Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye

Sci. China Inf. Sci., 2020

2018

A Novel Nonlinear Control Technique With Its Application to Magnetic Levitated Systems.

Luwei Qi, Jian-Ping Cai, Antai Han, Jun Wan, Congli Mei, Yunxia Luo

IEEE Access, 2018

2016

Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer.

Weichun Luo, Hong Yang, Wenwu Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Hao Xu, Yanrong Wang, Luwei Qi, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye

Microelectron. Reliab., 2016