Huilong Zhu

According to our database, Huilong Zhu authored at least 14 papers between 2015 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2023

On the SRAM with comb-shaped nano FETs advancing to 3 nm node and beyond.

Xinhao Li, Huilong Zhu, Zhenzhen Kong, Qi Wang, Yongkui Zhang, Zhenhua Wu

Microelectron. J., 2023

2022

Data Augmentation Algorithm Based on Local Dynamic Transformation.

Huilong Zhu, Jing Zhang, Li Hu, Chenghao Li, Maomao Shan, Qiyu Duan

Proceedings of the International Conference on Artificial Intelligence, 2022

2021

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.

Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu

Microelectron. J., 2021

Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits.

Weixing Huang, Huilong Zhu, Yongkui Zhang, Zhenhua Wu, Kunpeng Jia, Xiaogen Yin, Yangyang Li, Chen Li, Xuezheng Ai, Qiang Huo, Junfeng Li

Microelectron. J., 2021

2020

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET.

Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2020

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level.

Weixing Huang, Huilong Zhu, Kunpeng Jia, Zhenhua Wu, Xiaogen Yin, Qiang Huo, Yongkui Zhang

CoRR, 2020

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO₂/TiN-capping/TiAl gate stacks.

Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye

Sci. China Inf. Sci., 2020

2019

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer.

Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2019

2018

A novel highly reliable and low-power radiation hardened SRAM bit-cell design.

Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2018

A novel self-recoverable and triple nodes upset resilience DICE latch.

Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2018

A novel SEU tolerant memory cell for space applications.

Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2018

2017

Charge pumping test technique using CMOS ring oscillator on leakage issue.

Yongbo Liu, Zhengyong Zhu, Huilong Zhu, Guangxing Wan, Junfeng Li, Chao Zhao

Microelectron. J., 2017

2016

Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer.

Weichun Luo, Hong Yang, Wenwu Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Hao Xu, Yanrong Wang, Luwei Qi, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye

Microelectron. Reliab., 2016

2015

Overshoot stress impact on HfO2 high-κ layer dynamic SILC.

Guangxing Wan, Tianli Duan, Shuxiang Zhang, Lingli Jiang, Bo Tang, Chao Zhao, Huilong Zhu, Hongyu Yu

Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015