M. Monishmurali

According to our database1, M. Monishmurali authored at least 7 papers between 2020 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2023
Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Extremely Large Breakdown to Snapback Voltage Offset $(\mathrm{V}_{\mathrm{t}1} > > \mathrm{V}_{\text{BD}})$: Another Way to Improve ESD Resilience of LDMOS Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
A Novel High Voltage Drain Extended FinFET SCR for SoC Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Peculiar Current Instabilities & Failure Mechanism in Vertically Stacked Nanosheet ggN-FET.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020


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