Mamidala Jagadesh Kumar

Orcid: 0000-0001-6657-1277

According to our database1, Mamidala Jagadesh Kumar authored at least 12 papers between 2002 and 2020.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2020
Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study.
IEEE Access, 2020

2017
Double gate symmetric tunnel FET: investigation and analysis.
IET Circuits Devices Syst., 2017

Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs.
IEEE Access, 2017

DC Drain Current Model for Tunnel FETs Considering Source and Drain Depletion Regions.
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017

2012
Modeling of Partially Depleted SOI DEMOSFETs with a Sub-circuit Utilizing the HiSIM-HV Compact Model.
Proceedings of the 25th International Conference on VLSI Design, 2012

2010
A New Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applications.
Proceedings of the VLSI Design 2010: 23rd International Conference on VLSI Design, 2010

2007
Analytical Drain Current Model of Nanoscale Strained-Si/SiGe MOSFETs for Analog Circuit Simulation.
Proceedings of the 20th International Conference on VLSI Design (VLSI Design 2007), 2007

2004
Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study.
Microelectron. J., 2004

A New Surface Accumulation Layer Transistor(SALTran) Concept for Current Gain Enhancement in Bipolar Transistors.
Proceedings of the 17th International Conference on VLSI Design (VLSI Design 2004), 2004

2003
2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI.
Microelectron. Reliab., 2003

A New Lateral SiGe-Base PNM Schottky Collector Bipolar Transistor on SOI for Non-saturating VLSI Logic Design.
Proceedings of the 16th International Conference on VLSI Design (VLSI Design 2003), 2003

2002
Elimination of bipolar induced drain breakdown and single transistor latch in submicron PD SOI MOSFET.
IEEE Trans. Reliab., 2002


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