Mengxuan Yang

Orcid: 0000-0002-7149-9414

According to our database1, Mengxuan Yang authored at least 6 papers between 2019 and 2026.

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Bibliography

2026
Regularity of Second-Order Elliptic PDEs in Spectral Barron Spaces.
CoRR, February, 2026

2025
Twisted TMDs in the Small-Angle Limit: Exponentially Flat and Trivial Bands.
SIAM J. Appl. Math., 2025

2022
Physical investigation of subthreshold swing degradation behavior in negative capacitance FET.
Sci. China Inf. Sci., 2022

Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors.
Sci. China Inf. Sci., 2022

A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2019
Deep insight into the voltage amplification effect from ferroelectric negative capacitance.
Sci. China Inf. Sci., 2019


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