Mengxuan Yang

According to our database, Mengxuan Yang authored at least 4 papers between 2019 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2022

Physical investigation of subthreshold swing degradation behavior in negative capacitance FET.

Mengxuan Yang, Qianqian Huang, Kaifeng Wang, Chang Su, Liang Chen, Yangyuan Wang, Ru Huang

Sci. China Inf. Sci., 2022

Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors.

Mengxuan Yang, Qianqian Huang, Chang Su, Liang Chen, Yangyuan Wang, Ru Huang

Sci. China Inf. Sci., 2022

A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning.

Jin Luo, Weikai Xu, Boyi Fu, Zheru Yu, Mengxuan Yang, Yiqing Li, Qianqian Huang, Ru Huang

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2019

Deep insight into the voltage amplification effect from ferroelectric negative capacitance.

Huimin Wang, Qianqian Huang, Mengxuan Yang, Xing Zhang, Ru Huang

Sci. China Inf. Sci., 2019