Miguel Ullán

According to our database, Miguel Ullán authored at least 4 papers between 2002 and 2014.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2014

Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses.

V. S. Pershenkov, Miguel Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez

Microelectron. Reliab., 2014

2012

Simulation methodology for dose effects in lateral DMOS transistors.

Pablo Fernández-Martínez, Francisco Rogelio Palomo, S. Díez, Salvador Hidalgo, Miguel Ullán, David Flores, Roland Sorge

Microelectron. J., 2012

2006

Test structure assembly for bump bond yield measurement on high density flip chip technologies.

Miguel Ullán, Manuel Lozano, Mokhtar Chmeissani, G. Blanchot, Enric Cabruja, J. García, M. Maiorino, Ricardo Martínez, Giulio Pellegrini, Carles Puigdengoles

Microelectron. Reliab., 2006

2002

Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides.

Joan Marc Rafí, B. Vergnet, Francesca Campabadal, Celeste Fleta, Luis Fonseca, Manuel Lozano, C. Martínez, Miguel Ullán

Microelectron. Reliab., 2002