Francesca Campabadal

According to our database, Francesca Campabadal authored at least 12 papers between 2002 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Variability in Resistive Memories.

Juan Bautista Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia Bargallo González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua

Adv. Intell. Syst., June, 2023

True Random Number Generator Based on the Variability of the High Resistance State of RRAMs.

Maryam Akbari, Sattar Mirzakuchaki, Daniel Arumí, Salvador Manich, Álvaro Gómez-Pau, Francesca Campabadal, Mireia Bargallo González, Rosa Rodríguez-Montañés

IEEE Access, 2023

2022

An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance.

David Maldonado, Francisco Jiménez-Molinos, Juan Bautista Roldán, M. B. González, Francesca Campabadal

Proceedings of the 37th Conference on Design of Circuits and Integrated Systems, 2022

2021

Simulation of serial RRAM cell based on a Verilog-A compact model.

Binbin Yang, Daniel Arumí, Salvador Manich, Álvaro Gómez-Pau, Rosa Rodríguez-Montañés, Juan Bautista Roldán, Mireia Bargallo González, Francesca Campabadal, Liang Fang

Proceedings of the XXXVI Conference on Design of Circuits and Integrated Systems, 2021

2020

Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors.

Mireia Bargallo González, Marcos Maestro-Izquierdo, Francesca Campabadal, Samuel Aldana, Francisco Jiménez-Molinos, Juan Bautista Roldán

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A physically based SPICE model for RRAMs including RTN.

Gerardo González-Cordero, M. B. González, Francesca Campabadal, Francisco Jiménez-Molinos, Juan Bautista Roldán

Proceedings of the XXXV Conference on Design of Circuits and Integrated Systems, 2020

2018

Device variability tolerance of a RRAM-based self-organizing neuromorphic system.

Marta Pedro, Javier Martín-Martínez, E. Miranda, Rosana Rodríguez, Montserrat Nafría, M. B. González, Francesca Campabadal

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Electrical characterization of multiple leakage current paths in HfO₂/Al₂O₃-based nanolaminates.

Alberto Rodriguez-Fernandez, M. B. González, Francesca Campabadal, Jordi Suñé, Enrique Miranda

Microelectron. Reliab., 2015

2013

Field-effect control of breakdown paths in HfO₂ based MIM structures.

X. Saura, X. Lian, David Jiménez, Enrique Miranda, Xavier Borrisé, Francesca Campabadal, Jordi Suñé

Microelectron. Reliab., 2013

2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al₂O₃ dielectrics of different thickness.

Joan Marc Rafí, M. B. González, Kenichiro Takakura, I. Tsunoda, M. Yoneoka, Oihane Beldarrain, Miguel Zabala, Francesca Campabadal

Microelectron. Reliab., 2013

2006

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.

Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys

Microelectron. Reliab., 2006

2002

Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides.

Joan Marc Rafí, B. Vergnet, Francesca Campabadal, Celeste Fleta, Luis Fonseca, Manuel Lozano, C. Martínez, Miguel Ullán

Microelectron. Reliab., 2002