Salvador Hidalgo

According to our database, Salvador Hidalgo authored at least 17 papers between 2003 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Inverse LGAD (iLGAD) Periphery Optimization for Surface Damage Irradiation.

Albert Doblas, David Flores, Salvador Hidalgo, Neil Moffat, Giulio Pellegrini, David Quirion, Jairo Villegas, Dzmitry Maneuski, Marie Ruat, Pablo Fajardo

Sensors, April, 2023

2022

Study of Ionization Charge Density-Induced Gain Suppression in LGADs.

María del Carmen Jiménez-Ramos, Javier García López, Adrián García-Osuna, Iván Vila, Esteban Currás, Richard Jaramillo, Salvador Hidalgo, Giulio Pellegrini

Sensors, 2022

2018

Large-Area Automated Layout Extraction Methodology for Full-IC Reverse Engineering.

Raul Quijada, Roger Dura, Jofre Pallares, Xavier Formatje, Salvador Hidalgo, Francisco Serra-Graells

J. Hardw. Syst. Secur., 2018

2016

A Verilog-A model of a silicon resistive strip for particle detectors.

Nil Franch, Oscar Alonso, Ángel Diéguez, Salvador Hidalgo, Iván Vila

Proceedings of the 13th International Conference on Synthesis, 2016

2014

3.3 kV PT-IGBT with voltage-sensor monolithically integrated.

Jesús Urresti, Salvador Hidalgo, David Flores, Daniel Fernández Hevia

IET Circuits Devices Syst., 2014

The use of digital image processing for IC reverse engineering.

Raul Quijada, Arnau Raventos, Francesc Tarres, Roger Dura, Salvador Hidalgo

Proceedings of the IEEE 11th International Multi-Conference on Systems, Signals & Devices, 2014

2012

Simulation methodology for dose effects in lateral DMOS transistors.

Pablo Fernández-Martínez, Francisco Rogelio Palomo, S. Díez, Salvador Hidalgo, Miguel Ullán, David Flores, Roland Sorge

Microelectron. J., 2012

2011

Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.

Xavier Perpiñà, Jean-François Serviere, Jesús Urresti-Ibañez, Ignasi Cortés, Xavier Jordà, Salvador Hidalgo, José Rebollo, Michel Mermet-Guyennet

IEEE Trans. Ind. Electron., 2011

2008

IGBT module failure analysis in railway applications.

X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet

Microelectron. Reliab., 2008

Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors.

Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo

Microelectron. Reliab., 2008

Superjunction LDMOS on thick-SOI technology for RF applications.

Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo

Microelectron. J., 2008

2005

Lateral punch-through TVS devices for on-chip protection in low-voltage applications.

Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo

Microelectron. Reliab., 2005

Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.

Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo

Microelectron. Reliab., 2005

2004

Design considerations for 6.5 kV IGBT devices.

Miquel Vellvehí, David Flores, Xavier Jordà, Salvador Hidalgo, José Rebollo, L. Coulbeck, P. Waind

Microelectron. J., 2004

Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.

Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán

Microelectron. J., 2004

2003

Passivation and packaging of positive bevelled edge termination and related electrical stability.

Salvador Hidalgo, David Flores, Isabel Obieta, I. Mazarredo

Microelectron. Reliab., 2003

Optimisation of very low voltage TVS protection devices.

Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, José Rebollo, I. Mazarredo

Microelectron. J., 2003