Joan Marc Rafí

According to our database, Joan Marc Rafí authored at least 6 papers between 2002 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2013

2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al₂O₃ dielectrics of different thickness.

Joan Marc Rafí, M. B. González, Kenichiro Takakura, I. Tsunoda, M. Yoneoka, Oihane Beldarrain, Miguel Zabala, Francesca Campabadal

Microelectron. Reliab., 2013

2006

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.

Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys

Microelectron. Reliab., 2006

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.

Kiyoteru Hayama, Kenichiro Takakura, K. Shigaki, Hidenori Ohyama, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys

Microelectron. Reliab., 2006

2005

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.

Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, S. Kuboyama, S. Matsuda, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys

Microelectron. Reliab., 2005

2004

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation.

Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris

Microelectron. Reliab., 2004

2002

Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides.

Joan Marc Rafí, B. Vergnet, Francesca Campabadal, Celeste Fleta, Luis Fonseca, Manuel Lozano, C. Martínez, Miguel Ullán

Microelectron. Reliab., 2002