Mikael Östling

According to our database1, Mikael Östling authored at least 13 papers between 1999 and 2017.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Awards

IEEE Fellow

IEEE Fellow 2004, "For contributions to semiconductor device technology and education.".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2017
Gated base structure for improved current gain in SiC bipolar technology.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016
Toward effective passivation of graphene to humidity sensing effects.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Step tunneling-enhanced hot-electron injection in vertical graphene base transistors.
Proceedings of the 45th European Solid State Device Research Conference, 2015

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.
Proceedings of the 45th European Solid State Device Research Conference, 2015

2014
PDMS-supported graphene transfer using intermediary polymer layers.
Proceedings of the 44th European Solid State Device Research Conference, 2014

Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2013
Mobility enhancement by integration of TmSiO IL in 0.65nm EOT high-k/metal gate MOSFETs.
Proceedings of the European Solid-State Device Research Conference, 2013

2012
An integration approach for graphene double-gate transistors.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

CMOS compatible ALD high-k double slot grating couplers for on-chip optical interconnects.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011
High power devices in wide bandgap semiconductors.
SCIENCE CHINA Information Sciences, 2011

2001
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors.
Microelectron. Reliab., 2001

1999
Bipolar Technology.
Proceedings of the VLSI Handbook., 1999


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