Tibor Grasser

According to our database1, Tibor Grasser authored at least 77 papers between 2003 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2016, "For contributions to modeling the reliability of semiconductor devices".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2022
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2022

Finding Suitable Gate Insulators for Reliable 2D FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper.
Proceedings of the International Conference on IC Design and Technology, 2021

Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2020
A Compact Physics Analytical Model for Hot-Carrier Degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

On the impact of mechanical stress on gate oxide trapping.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Similarities and Differences of BTI in SiC and Si Power MOSFETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.
Proceedings of the 2020 Device Research Conference, 2020

2019
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018
Controversial issues in negative bias temperature instability.
Microelectron. Reliab., 2018

Comphy - A compact-physics framework for unified modeling of BTI.
Microelectron. Reliab., 2018

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab., 2018

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.
Microelectron. Reliab., 2018

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Reliability of next-generation field-effect transistors with transition metal dichalcogenides.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

Annealing and Encapsulation of CVD-MoS2 FETs with 10<sup>10</sup>On/Off Current Ratio.
Proceedings of the 76th Device Research Conference, 2018

2017
Transformation: nanotechnology - challenges in transistor design and future technologies.
Elektrotech. Informationstechnik, 2017

Physical modeling of the hysteresis in M0S2 transistors.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016
Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units.
ACM Trans. Math. Softw., 2016

ViennaCL - Linear Algebra Library for Multi- and Many-Core Architectures.
SIAM J. Sci. Comput., 2016

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.
Microelectron. Reliab., 2015

Characterization and modeling of reliability issues in nanoscale devices.
Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

Origins and implications of increased channel hot carrier variability in nFinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the volatility of oxide defects: Activation, deactivation, and transformation.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements.
Proceedings of the 45th European Solid State Device Research Conference, 2015

The defect-centric perspective of device and circuit reliability - From individual defects to circuits.
Proceedings of the 45th European Solid State Device Research Conference, 2015

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.
Proceedings of the 45th European Solid State Device Research Conference, 2015

Experimental evidences and simulations of trap generation along a percolation path.
Proceedings of the 45th European Solid State Device Research Conference, 2015

2014
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits.
IEEE Trans. Very Large Scale Integr. Syst., 2014

Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.
Microelectron. Reliab., 2014

Circuit simulation of workload-dependent RTN and BTI based on trap kinetics.
Microelectron. Reliab., 2014

Performance portability study of linear algebra kernels in OpenCL.
Proceedings of the International Workshop on OpenCL, 2014

Characterization and modeling of charge trapping: From single defects to devices.
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2013
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.
Microelectron. Reliab., 2013

2012
Defect-centric perspective of time-dependent BTI variability.
Microelectron. Reliab., 2012

New insights on the PBTI phenomena in SiON pMOSFETs.
Microelectron. Reliab., 2012

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities.
Microelectron. Reliab., 2012

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic.
Microelectron. Reliab., 2012

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.
Proceedings of the IEEE International Conference on IC Design & Technology, 2012

2011
An analytical approach for physical modeling of hot-carrier induced degradation.
Microelectron. Reliab., 2011

Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.
Microelectron. Reliab., 2011

A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors.
Proceedings of the Facing the Multicore - Challenge II, 2011

2010
Interface traps density-of-states as a vital component for hot-carrier degradation modeling.
Microelectron. Reliab., 2010

Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors.
J. Comput. Phys., 2010

2009
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.
Microelectron. Reliab., 2009

On the temperature and voltage dependence of short-term negative bias temperature stress.
Microelectron. Reliab., 2009

Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
Proceedings of the Large-Scale Scientific Computing, 7th International Conference, 2009

2008
On the temperature dependence of NBTI recovery.
Microelectron. Reliab., 2008

2007
Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007

VSP - A gate stack analyzer.
Microelectron. Reliab., 2007

Comparison of deposition models for a TEOS LPCVD process.
Microelectron. Reliab., 2007

Editorial.
Microelectron. Reliab., 2007

Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures.
Microelectron. Reliab., 2007

2006
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2006

2005
An advanced equation assembly module.
Eng. Comput., 2005

2004
Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination.
Microelectron. Reliab., 2004

Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures.
Microelectron. J., 2004

2003
A review of hydrodynamic and energy-transport models for semiconductor device simulation.
Proc. IEEE, 2003

Improving SiC lateral DMOSFET reliability under high field stress.
Microelectron. Reliab., 2003


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