Tibor Grasser

Bernhard Schrenk

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2022

Finding Suitable Gate Insulators for Reliable 2D FETs.

[BibT_eX]

[DOI]

Theresia Knobloch

Yury Yu. Illarionov

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities.

[BibT_eX]

[DOI]

Christoph Wilhelmer

Markus Jech

Lukas Cvitkovich

Michael Waltl

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study.

[BibT_eX]

[DOI]

Bibhas Manna

Theresia Knobloch

Yury Illarionov

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper.

[BibT_eX]

[DOI]

Proceedings of the International Conference on IC Design and Technology, 2021

Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.

[BibT_eX]

[DOI]

Christoph Wilhelmer

Markus Jech

Lukas Cvitkovich

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.

[BibT_eX]

[DOI]

Diego Milardovich

Markus Jech

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.

[BibT_eX]

[DOI]

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2020

A Compact Physics Analytical Model for Hot-Carrier Degradation.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

On the impact of mechanical stress on gate oxide trapping.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Similarities and Differences of BTI in SiC and Si Power MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.

[BibT_eX]

[DOI]

Proceedings of the 2020 Device Research Conference, 2020

2019

Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.

[BibT_eX]

[DOI]

Alexander Makarov

Ben Kaczer

Philippe Roussel

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.

[BibT_eX]

[DOI]

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

Controversial issues in negative bias temperature instability.

[BibT_eX]

[DOI]

James H. Stathis

Souvik Mahapatra

Microelectron. Reliab., 2018

Comphy - A compact-physics framework for unified modeling of BTI.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Reliability of next-generation field-effect transistors with transition metal dichalcogenides.

[BibT_eX]

[DOI]

Yury Yu. Illarionov

Aday J. Molina-Mendoza

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.

[BibT_eX]

[DOI]

Proceedings of the 48th European Solid-State Device Research Conference, 2018

Annealing and Encapsulation of CVD-MoS2 FETs with 10<sup>10</sup>On/Off Current Ratio.

[BibT_eX]

[DOI]

Proceedings of the 76th Device Research Conference, 2018

2017

Transformation: nanotechnology - challenges in transistor design and future technologies.

[BibT_eX]

[DOI]

Bianka Ullmann

Elektrotech. Informationstechnik, 2017

Physical modeling of the hysteresis in M0S2 transistors.

[BibT_eX]

[DOI]

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units.

[BibT_eX]

[DOI]

ACM Trans. Math. Softw., 2016

ViennaCL - Linear Algebra Library for Multi- and Many-Core Architectures.

[BibT_eX]

[DOI]

SIAM J. Sci. Comput., 2016

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

[BibT_eX]

[DOI]

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Characterization and modeling of reliability issues in nanoscale devices.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

Origins and implications of increased channel hot carrier variability in nFinFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the volatility of oxide defects: Activation, deactivation, and transformation.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements.

[BibT_eX]

[DOI]

Proceedings of the 45th European Solid State Device Research Conference, 2015

The defect-centric perspective of device and circuit reliability - From individual defects to circuits.

[BibT_eX]

[DOI]

Proceedings of the 45th European Solid State Device Research Conference, 2015

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.

[BibT_eX]

[DOI]

Proceedings of the 45th European Solid State Device Research Conference, 2015

Experimental evidences and simulations of trap generation along a percolation path.

[BibT_eX]

[DOI]

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits.

[BibT_eX]

[DOI]

Vinicius V. A. Camargo

IEEE Trans. Very Large Scale Integr. Syst., 2014

Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Circuit simulation of workload-dependent RTN and BTI based on trap kinetics.

[BibT_eX]

[DOI]

Vinicius V. A. Camargo

Ben Kaczer

Gilson I. Wirth

Microelectron. Reliab., 2014

Performance portability study of linear algebra kernels in OpenCL.

[BibT_eX]

[DOI]

Proceedings of the International Workshop on OpenCL, 2014

Characterization and modeling of charge trapping: From single defects to devices.

[BibT_eX]

[DOI]

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2013

Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.

[BibT_eX]

[DOI]

Thomas Aichinger

Michael Nelhiebel

Microelectron. Reliab., 2013

2012

Defect-centric perspective of time-dependent BTI variability.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

New insights on the PBTI phenomena in SiON pMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

2011

An analytical approach for physical modeling of hot-carrier induced degradation.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors.

[BibT_eX]

[DOI]

Karl Rupp

Ansgar Jüngel

Proceedings of the Facing the Multicore - Challenge II, 2011

2010

Interface traps density-of-states as a vital component for hot-carrier degradation modeling.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2010

Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors.

[BibT_eX]

[DOI]

Karl Rupp

Ansgar Jüngel

J. Comput. Phys., 2010

2009

Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2009

On the temperature and voltage dependence of short-term negative bias temperature stress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2009

Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.

[BibT_eX]

[DOI]

Proceedings of the Large-Scale Scientific Computing, 7th International Conference, 2009

2008

On the temperature dependence of NBTI recovery.

[BibT_eX]

[DOI]

Thomas Aichinger

Michael Nelhiebel

Microelectron. Reliab., 2008

2007

Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems.

[BibT_eX]

[DOI]

Michael Spevak

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007

VSP - A gate stack analyzer.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2007

Comparison of deposition models for a TEOS LPCVD process.

[BibT_eX]

[DOI]

Stefan Holzer

Alireza Sheikholeslami

Markus Karner

Siegfried Selberherr

Microelectron. Reliab., 2007

Editorial.

[BibT_eX]

[DOI]