Michael Waltl

According to our database1, Michael Waltl authored at least 20 papers between 2014 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
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PhD thesis 
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Online presence:

On csauthors.net:

Bibliography

2022
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2022

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata.
Proceedings of the 26th IEEE European Test Symposium, 2021

2020
Defect Spectroscopy in SiC Devices.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Utilizing NBTI for Operation Detection of Integrated Circuits.
Proceedings of the VLSI Design and Test - 23rd International Symposium, 2019

Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits.
Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019

2018
Comphy - A compact-physics framework for unified modeling of BTI.
Microelectron. Reliab., 2018

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab., 2018

Reliability of next-generation field-effect transistors with transition metal dichalcogenides.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Annealing and Encapsulation of CVD-MoS2 FETs with 10<sup>10</sup>On/Off Current Ratio.
Proceedings of the 76th Device Research Conference, 2018

2017
Physical modeling of the hysteresis in M0S2 transistors.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.
Proceedings of the 45th European Solid State Device Research Conference, 2015

2014
Characterization and modeling of charge trapping: From single defects to devices.
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014


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