Yury Illarionov

Orcid: 0000-0003-4323-1389

According to our database1, Yury Illarionov authored at least 8 papers between 2015 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2022
Finding Suitable Gate Insulators for Reliable 2D FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2020
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.
Proceedings of the 2020 Device Research Conference, 2020

2018
Reliability of next-generation field-effect transistors with transition metal dichalcogenides.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Annealing and Encapsulation of CVD-MoS2 FETs with 10<sup>10</sup>On/Off Current Ratio.
Proceedings of the 76th Device Research Conference, 2018

2017
Physical modeling of the hysteresis in M0S2 transistors.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.
Proceedings of the 45th European Solid State Device Research Conference, 2015


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