Mitsuhisa Ikeda

According to our database, Mitsuhisa Ikeda authored at least 12 papers between 2005 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots.

Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki

IEICE Trans. Electron., 2019

2017

Embedding of Ti Nanodots into SiO_x and Its Impact on Resistance Switching Behaviors.

Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2017

2014

High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy.

Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi

IEICE Trans. Electron., 2014

Selective Growth of Self-Assembling Si and SiGe Quantum Dots.

Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki

IEICE Trans. Electron., 2014

2013

Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy.

Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi

IEICE Trans. Electron., 2013

Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior.

Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2013

Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures.

Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2013

2011

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor.

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh

IEICE Trans. Electron., 2011

2010

Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots.

Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki

IEICE Trans. Electron., 2010

2009

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories.

Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki

IEICE Trans. Electron., 2009

2008

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO₂ Structure as Evaluated by AFM/KFM.

Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2008

2005

Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots.

Taku Shibaguchi, Mitsuhisa Ikeda, Hideki Murakami, Seiichi Miyazaki

IEICE Trans. Electron., 2005