Seiichi Miyazaki

According to our database, Seiichi Miyazaki authored at least 25 papers between 2005 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Magnetic-Field Dependent Electron Transport of Fe₃Si Nanodots.

Jialin Wu, Katsunori Makihara, Hai Zhang, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki

IEICE Trans. Electron., October, 2022

Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures.

Katsunori Makihara, Tatsuya Takemoto, Shuji Obayashi, Akio Ohta, Noriyuki Taoka, Seiichi Miyazaki

IEICE Trans. Electron., October, 2022

2019

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots.

Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki

IEICE Trans. Electron., 2019

2017

Embedding of Ti Nanodots into SiO_x and Its Impact on Resistance Switching Behaviors.

Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2017

2015

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements.

Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2015

2014

High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy.

Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi

IEICE Trans. Electron., 2014

Selective Growth of Self-Assembling Si and SiGe Quantum Dots.

Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki

IEICE Trans. Electron., 2014

2013

Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy.

Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi

IEICE Trans. Electron., 2013

X-Ray Photoemission Study of SiO₂/Si/Si_0.55Ge_0.45/Si Heterostructures.

Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, Masao Sakuraba, Junichi Murota

IEICE Trans. Electron., 2013

Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior.

Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2013

Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures.

Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2013

Control of Interfacial Reaction of HfO₂/Ge Structure by Insertion of Ta Oxide Layer.

Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2013

Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System.

Motoki Fukusima, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2013

2012

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering.

Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2012

2011

Impact of Annealing Ambience on Resistive Switching in Pt/TiO₂/Pt Structure.

Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2011

Characterization of Mg Diffusion into HfO₂/SiO₂/Si(100) Stacked Structures and Its Impact on Detect State Densities.

Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2011

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor.

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh

IEICE Trans. Electron., 2011

2010

Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots.

Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki

IEICE Trans. Electron., 2010

2009

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories.

Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki

IEICE Trans. Electron., 2009

2008

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO₂ Structure as Evaluated by AFM/KFM.

Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2008

2007

Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors.

Yanli Pei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, Seiji Inumiya, Yasuo Nara

IEICE Trans. Electron., 2007

2005

Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots.

Taku Shibaguchi, Mitsuhisa Ikeda, Hideki Murakami, Seiichi Miyazaki

IEICE Trans. Electron., 2005

Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation.

Hideki Murakami, Wataru Mizubayashi, Hirokazu Yokoi, Atsushi Suyama, Seiichi Miyazaki

IEICE Trans. Electron., 2005

Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate.

Hideki Murakami, Yoshikazu Moriwaki, Masafumi Fujitake, Daisuke Azuma, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2005

Characterization of Germanium Nanocrystallites Grown on SiO₂ by a Conductive AFM Probe Technique.

Katsunori Makihara, Yoshihiro Okamoto, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2005