Mohamed Khalil Bouchoucha

Orcid: 0000-0001-6578-1803

According to our database1, Mohamed Khalil Bouchoucha authored at least 9 papers between 2021 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
Corrections to "Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge".
IEEE Access, 2023

A 5-DC-parameter MOSFET model for circuit simulation in QucsStudio and SPECTRE.
Proceedings of the 21st IEEE Interregional NEWCAS Conference, 2023

Design-oriented model for short-channel MOS transistors based on inversion charge.
Proceedings of the 14th IEEE Latin America Symposium on Circuits and System, 2023

Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2023

Performance benchmark of State-of-the-art Sub-6-GHz wideband LNAs Based on an Extensive Survey.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2023

A wideband sub-6GHz continuously tunable gm-boosted CG Low Noise Amplifier in 28 nm FD-SOI CMOS technology.
Proceedings of the 49th IEEE European Solid State Circuits Conference, 2023

2022
A Survey on Sub-6 GHz Wideband LNAs for Ultra- Low-Power IoT applications.
Dataset, October, 2022

Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge.
IEEE Access, 2022

2021
A gm/ID Design Methodology for 28 nm FD-SOI CMOS Resistive Feedback LNAs.
Proceedings of the 28th IEEE International Conference on Electronics, 2021


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