MouFu Kong

According to our database, MouFu Kong authored at least 18 papers between 2019 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit.

Moufu Kong, Ning Yu, Yaowen Zhang, Zeyu Cheng, Bingke Zhang, Bo Yi, Hongqiang Yang

Microelectron. J., 2025

A new concept high-k GaN FinFET with integrated SBD breaking the unipolar limit of GaN and realizing excellent reverse recovery performance.

Moufu Kong, Qizhi Feng, Hongfei Deng, Zhaoyu Ai, Mingliang Yang, Ning Yu, Bingke Zhang, Bo Yi, Hongqiang Yang

Microelectron. J., 2025

2024

Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques.

Moufu Kong, Hongfei Deng, Yingzhi Luo, Jiayan Zhu, Bo Yi, Hongqiang Yang, Qiang Hu, Fanxin Meng

Microelectron. J., 2024

2023

Modeling and simulation of an insulated-gate HEMT using p-SnO₂ gate for high V_TH design.

Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang

Microelectron. J., September, 2023

Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction.

Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance.

Moufu Kong, Zhi Lin, Hongfei Deng, Bo Yi, Rui Jin, Hongqiang Yang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance.

Moufu Kong, Ke Huang, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

An Ultra-low Specific On-resistance SiC LDMOS Using Double RESURF and Field Plate Techniques.

Moufu Kong, Zeyu Cheng, Ning Yu, Rui Jin, Jiaxin Guo, Hongqiang Yang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance.

Zhaoyu Ai, Haiyun Liu, Xinyang Chen, Jing Feng, Yuxi Zhou, Moufu Kong

Proceedings of the 15th IEEE International Conference on ASIC, 2023

2021

A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp.

Bo Yi, Zheng Wu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang

Proceedings of the 14th IEEE International Conference on ASIC, 2021

A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances.

Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi

Proceedings of the 14th IEEE International Conference on ASIC, 2021

A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance.

Moufu Kong, Ke Huang, Bin Wang, Cong Liu, Bo Yi, Hongqiang Yang

Proceedings of the 14th IEEE International Conference on ASIC, 2021

A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics.

Moufu Kong, Zewei Hu, Jiacheng Gao, Zongqi Chen, Jiaxin Guo, Sadaf Ali Nafees, Bo Yi, Hongqiang Yang

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020

Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer.

Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang

IEICE Electron. Express, 2020

2019

SiC trench MOSFET with integrated side-wall Schottky barrier diode having P⁺ electric field shield.

Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, MouFu Kong

IEICE Electron. Express, 2019

Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes.

Cong Liu, MouFu Kong, Hanzhi Chen, Bo Yi, Bingke Zhang, Xingbi Chen

Proceedings of the 13th IEEE International Conference on ASIC, 2019

A Low On-state Voltage and Large Current Capability Thin SOI-LIGBT with Trench NMOS.

Jun Huang, MouFu Kong, Xingbi Chen

Proceedings of the 13th IEEE International Conference on ASIC, 2019

Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability.

Rongxin Chen, Bo Yi, MouFu Kong, Xingbi Chen

Proceedings of the 13th IEEE International Conference on ASIC, 2019