Olayiwola Alatise

According to our database, Olayiwola Alatise authored at least 15 papers between 2011 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET.

Juefei Yang, Saeed Jahdi, Bernard H. Stark, Ruizhu Wu, Olayiwola Alatise, Jose Angel Ortiz Gonzalez

Proceedings of the IECON 2021, 2021

2020

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs.

Jose Angel Ortiz Gonzalez, Ruizhu Wu, Saeed Jahdi, Olayiwola Alatise

IEEE Trans. Ind. Electron., 2020

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs.

Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Phil Mawby

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Bias temperature instability and condition monitoring in SiC power MOSFETs.

Jose Angel Ortiz Gonzalez, Olayiwola Alatise

Microelectron. Reliab., 2018

2017

Evaluation of SiC Schottky Diodes Using Pressure Contacts.

Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby, Chris Bailey

IEEE Trans. Ind. Electron., 2017

Evaluation of the impact of the physical dimensions and material of the semiconductor chip on the reliability of Sn3.5Ag solder interconnect in power electronic module: A finite element analysis perspective.

Pushparajah Rajaguru, Hua Lu, Chris Bailey, Jose Angel Ortiz Gonzalez, Olayiwola Alatise

Microelectron. Reliab., 2017

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs.

Jose Angel Ortiz Gonzalez, Olayiwola Alatise

Microelectron. Reliab., 2017

2016

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules.

Saeed Jahdi, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Li Ran, Philip Mawby

IEEE Trans. Ind. Electron., 2016

Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS.

Ji Hu, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Petros Alexakis, Li Ran, Philip Mawby

IEEE Trans. Ind. Electron., 2016

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules.

Jose Angel Ortiz Gonzalez, Attahir Murtala Aliyu, Olayiwola Alatise, Alberto Castellazzi, Li Ran, Phil Mawby

Microelectron. Reliab., 2016

2015

Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery.

Saeed Jahdi, Olayiwola Alatise, Li Ran, Philip Mawby

IEEE Trans. Ind. Electron., 2015

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs.

Saeed Jahdi, Olayiwola Alatise, Petros Alexakis, Li Ran, Philip Mawby

IEEE Trans. Ind. Electron., 2015

2013

The impact of silicon carbide technology on grid-connected Distributed Energy resources.

Saeed Jahdi, Olayiwola Alatise, Phil Mawby

Proceedings of the 4th IEEE PES Innovative Smart Grid Technologies Europe, 2013

2011

Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair.

Nii-Adotei Parker-Allotey, Olayiwola Alatise, Dean Hamilton, Michael R. Jennings, Phil Mawby, Rob Nash, Rob Magill

Proceedings of the 2nd IEEE PES International Conference and Exhibition on "Innovative Smart Grid Technologies", 2011

Super-junction trench MOSFETs for improved energy conversion efficiency.

Olayiwola Alatise, Nii-Allotey Adotei, Phil Mawby

Proceedings of the 2nd IEEE PES International Conference and Exhibition on "Innovative Smart Grid Technologies", 2011