Phil Mawby

According to our database, Phil Mawby authored at least 14 papers between 2007 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

In Situ Contact Pressure Monitoring of Press Pack Power Module Using FBG Sensors.

Hai Ren, Li Liu, Sinisa Djurovic, Li Ran, Xianming Liu, Hao Feng, Philip Mawby

IEEE Trans. Instrum. Meas., 2022

2021

Bipolar Degradation monitoring of 4H-SiC MOSFET Power Devices by Electroluminescence Measurements.

Amel Lachichi, Phil Mawby

Proceedings of the IECON 2021, 2021

2020

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs.

Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Phil Mawby

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2017

Evaluation of SiC Schottky Diodes Using Pressure Contacts.

Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby, Chris Bailey

IEEE Trans. Ind. Electron., 2017

2016

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules.

Saeed Jahdi, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Li Ran, Philip Mawby

IEEE Trans. Ind. Electron., 2016

Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS.

Ji Hu, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Petros Alexakis, Li Ran, Philip Mawby

IEEE Trans. Ind. Electron., 2016

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules.

Jose Angel Ortiz Gonzalez, Attahir Murtala Aliyu, Olayiwola Alatise, Alberto Castellazzi, Li Ran, Phil Mawby

Microelectron. Reliab., 2016

2015

Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery.

Saeed Jahdi, Olayiwola Alatise, Li Ran, Philip Mawby

IEEE Trans. Ind. Electron., 2015

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs.

Saeed Jahdi, Olayiwola Alatise, Petros Alexakis, Li Ran, Philip Mawby

IEEE Trans. Ind. Electron., 2015

2013

The impact of silicon carbide technology on grid-connected Distributed Energy resources.

Saeed Jahdi, Olayiwola Alatise, Phil Mawby

Proceedings of the 4th IEEE PES Innovative Smart Grid Technologies Europe, 2013

2011

Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair.

Nii-Adotei Parker-Allotey, Olayiwola Alatise, Dean Hamilton, Michael R. Jennings, Phil Mawby, Rob Nash, Rob Magill

Proceedings of the 2nd IEEE PES International Conference and Exhibition on "Innovative Smart Grid Technologies", 2011

Super-junction trench MOSFETs for improved energy conversion efficiency.

Olayiwola Alatise, Nii-Allotey Adotei, Phil Mawby

Proceedings of the 2nd IEEE PES International Conference and Exhibition on "Innovative Smart Grid Technologies", 2011

2008

Fast Thermal Models for Power Device Packaging.

Ian R. Swan, Angus T. Bryant, Philip Mawby

Proceedings of the Industry Applications Society Annual Meeting, 2008

2007

High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC.

Amador Pérez-Tomás, Michael R. Jennings, M. Davis, Vishal Shah, T. Grasby, James Anthony Covington, Philip A. Mawby

Microelectron. J., 2007