Patrick Fay

According to our database, Patrick Fay authored at least 14 papers between 1999 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge Termination.

Yu Duan, Andy Xie, Patrick Fay

Proceedings of the Device Research Conference, 2023

2022

BEOL Compatible Ferroelectric Routers for Run-time Reconfigurable Compute-in-Memory Accelerators.

Abhishek Khanna, Huacheng Ye, Y. Luo, G. Bajpai, M. San Jose, Wriddhi Chakraborty, Shimeng Yu, Patrick Fay, Suman Datta

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Polarization-Engineering of III-N mm-Wave Transistors for High Efficiency and Linearity.

Patrick Fay, Nivedhita Venkatesan, Jeong-Sun Moon

Proceedings of the Device Research Conference, 2022

2021

Modelling Challenges for Enabling High Performance Amplifiers in 5G/6G Applications.

Nagaditya Poluri, Maria Merlyne De Souza, Nivedhita Venkatesan, Patrick Fay

Proceedings of the 2021 28th International Conference on Mixed Design of Integrated Circuits and System, 2021

Electric Field Engineering in Graded-Channel GaN-Based HEMTs.

Nivedhita Venkatesan, Jeong-Sun Moon, Patrick Fay

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Optimization methods for achieving high diffraction efficiency with perfect electric conducting gratings.

Rubén Aylwin, Gerardo Silva-Oelker, Carlos Jerez-Hanckes, Patrick Fay

CoRR, 2020

Microwave Performance of Ferroelectric-Gated GaN HEMTs.

Chunlei Wu, Jeffrey Smith, Suman Datta, Yu Cao, Jinqiao Xie, Edward Beam, Patrick Fay

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

RF Performance of GaN-Based Graded-Channel HEMTs.

Nivedhita Venkatesan, Jeong-Sun Moon, Joel Wong, Bob Grabar, Michael Antcliffe, Peter Chen, Erdum Arkun, Isaac Khalaf, David Fanning, Patrick Fay

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019

Polarization Recovery Behavior of Hf0.5Zr0.5O2 on Gallium Nitride HEMT Heterostructures.

Chunlei Wu, Nikhita Shaju, Hansheng Ye, Benjamin Grisafe, Suman Datta, Patrick Fay

Proceedings of the Device Research Conference, 2019

Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-Wave.

Nivedhita Venkatesan, Gerardo Silva-Oelker, Patrick Fay

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage.

Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Chris Youtsey, Robert McCarthy, Louis Guido, Patrick Fay

Proceedings of the 76th Device Research Conference, 2018

2017

Advanced Terahertz Sensing and Imaging Systems Based on Integrated III-V Interband Tunneling Devices.

Lei Liu, Syed M. Rahman, Zhenguo Jiang, Wenjun Li, Patrick Fay

Proc. IEEE, 2017

2014

Incorporating specific absorption rate constraints into wireless signal design.

Bertrand M. Hochwald, David James Love, Su Yan, Patrick Fay, Jianming Jin

IEEE Commun. Mag., 2014

1999

Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications.

Patrick Fay, Gary H. Bernstein, David H. Chow, Joel N. Schulman, Pinaki Mazumder, William Williamson III, Barry K. Gilbert

Proceedings of the 9th Great Lakes Symposium on VLSI (GLS-VLSI '99), 1999