Edward Beam

According to our database, Edward Beam authored at least 5 papers between 2009 and 2020.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2020

Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design.

Brian P. Downey, Andy Xie, Shawn Mack, D. Scott Katzer, James G. Champlain, Yu Cao, Neeraj Nepal, Tyler A. Growden, Vikrant J. Gokhale, Robert L. Coffie, Matthew T. Hardy, Edward Beam, Cathy Lee, David J. Meyer

Proceedings of the 2020 Device Research Conference, 2020

Microwave Performance of Ferroelectric-Gated GaN HEMTs.

Chunlei Wu, Jeffrey Smith, Suman Datta, Yu Cao, Jinqiao Xie, Edward Beam, Patrick Fay

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019

Integration of Self-Biased Circulators on GaN/SiC for Ka-band RF application.

Yongjie Cui, Yu Cao, Manyam Pilla, Edward Beam, Andy Xie, Cathy Lee, Andrew Ketterson, Michael Roach, Anton Geiler, Michael Geiler, Lee Burns, Douglas Linkhart

Proceedings of the Device Research Conference, 2019

2018

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage.

Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Chris Youtsey, Robert McCarthy, Louis Guido, Patrick Fay

Proceedings of the 76th Device Research Conference, 2018

2009

Physical degradation of GaN HEMT devices under high drain bias reliability testing.

S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim

Microelectron. Reliab., 2009