R. Arinero

According to our database, R. Arinero authored at least 2 papers in 2011.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2011

Influence of the surrounding ambient on the reliability of the electrical characterization of thin oxide layers using an atomic force microscope.

W. Hourani, B. Gautier, Liviu Militaru, D. Albertini, A. Descamps-Mandine, R. Arinero

Microelectron. Reliab., 2011

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.

R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné

Microelectron. Reliab., 2011