Antoine D. Touboul

According to our database1, Antoine D. Touboul authored at least 10 papers between 2011 and 2020.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2020
Development and evaluation of a flexible instrumentation layer for system-level testing of radiation effects.
Proceedings of the IEEE Latin-American Test Symposium, 2020

Evaluation and Analysis of Technologies for Robotic Platforms for the Nuclear Decommissioning.
Proceedings of the 15th Design & Technology of Integrated Systems in Nanoscale Era, 2020

Effect of Temperature on Single Event Latchup Sensitivity.
Proceedings of the 15th Design & Technology of Integrated Systems in Nanoscale Era, 2020

2018
Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions.
Microelectron. Reliab., 2018

2017
A calculation method to estimate single event upset cross section.
Microelectron. Reliab., 2017

2013
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET.
Microelectron. Reliab., 2013

Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model.
Microelectron. Reliab., 2013

2012
On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum.
Microelectron. Reliab., 2012

Evaluation of test algorithms stress effect on SRAMs under neutron radiation.
Proceedings of the 18th IEEE International On-Line Testing Symposium, 2012

2011
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.
Microelectron. Reliab., 2011


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