Ralf Van Bentum

According to our database, Ralf Van Bentum authored at least 3 papers between 2013 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application.

Mingcheng Chang, Nigel Chan, Vivek Joshi, Sandra Hecker, Udo Ziller, Petra Poth, Alban Zaka, Tom Herrmann, Seunghwan Seo, Hongsik Yoon, Xin Zou, Zhen Xu, Hema Ramamurthy, Torsten Klick, Gabriele Congedo, Youmean Lee, Elke Erben, Gerd Zschaetzsch, Juergen Faul, Jon Kluth, Joerg Schmid, Ralf Van Bentum, Chad Weintraub

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016

Impact of field cycling on HfO2 based non-volatile memory devices.

Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf Van Bentum, Alfred Kersch, Christopher Künneth, Thomas Mikolajick

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2013

SRAM read current variability and its dependence on transistor statistics.

Sriramkumar Venugopalan, Vivek Joshi, Luis Zamudio, Matthias Goldbach, Gert Burbach, Ralf Van Bentum, Sriram Balasubramanian

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013