Renan Alves Fonseca

According to our database, Renan Alves Fonseca authored at least 7 papers between 2010 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes.

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine

J. Electron. Test., 2012

2011

On using address scrambling to implement defect tolerance in SRAMs.

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine

Proceedings of the 2011 IEEE International Test Conference, 2011

2010

Detecting NBTI induced failures in SRAM core-cells.

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine

Proceedings of the 28th IEEE VLSI Test Symposium, 2010

Setting test conditions for improving SRAM reliability.

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine

Proceedings of the 15th European Test Symposium, 2010

Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes.

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine

Proceedings of the 15th European Test Symposium, 2010

Impact of Resistive-Bridging Defects in SRAM Core-Cell.

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine

Proceedings of the Fifth IEEE International Symposium on Electronic Design, 2010

A statistical simulation method for reliability analysis of SRAM core-cells.

Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine

Proceedings of the 47th Design Automation Conference, 2010