Jean-Marie Dorkel

According to our database, Jean-Marie Dorkel authored at least 10 papers between 1999 and 2013.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2013

Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling.

Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel, Jean-Michel Reynes, Jean-Luc Massol, E. Pomes

Microelectron. Reliab., 2013

Distributed electrothermal modeling methodology for MOS gated power devices simulations.

Emmanuel Marcault, Jean-Luc Massol, Patrick Tounsi, Jean-Marie Dorkel

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

2012

Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations.

Emmanuel Marcault, Marie Breil, A. Bourennane, Patrick Tounsi, Jean-Marie Dorkel

Microelectron. Reliab., 2012

Innovative methodology to extract dynamic compact thermal models: Application to power devices.

Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel

Microelectron. J., 2012

2011

3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs.

Toufik Azoui, Patrick Tounsi, Philippe Dupuy, L. Guillot, Jean-Marie Dorkel

Microelectron. Reliab., 2011

2009

Source electrode evolution of a low voltage power MOSFET under avalanche cycling.

B. Bernoux, René Escoffier, P. Jalbaud, Jean-Marie Dorkel

Microelectron. Reliab., 2009

2005

Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue.

B. Khong, Patrick Tounsi, Philippe Dupuy, X. Chauffleur, Marc Legros, A. Deram, Colette Levade, G. Vanderschaeve, Jean-Marie Dorkel, Jean-Pierre Fradin

Microelectron. Reliab., 2005

2002

Characterization method of thermomechanical parameters for microelectronic materials.

Oliver Perat, Jean-Marie Dorkel, Emmanuel Scheid, Pierre Temple-Boyer, Y. S. Chung, A. Peyre-Lavigne, M. Zecri, Patrick Tounsi

Microelectron. Reliab., 2002

2001

Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology.

Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu

IEEE J. Solid State Circuits, 2001

1999

The mirrored lateral SCR (MILSCR) as an ESD protection structure: design and optimization using 2-D device simulation.

Christelle Delage, Nicolas Nolhier, Marise Bafleur, Jean-Marie Dorkel, Jo Hamid, Philippe Givelin, Jacques Lin-Kwang

IEEE J. Solid State Circuits, 1999