Xavier Garros

According to our database1, Xavier Garros authored at least 25 papers between 2001 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2023
Insight Into HCI Reliability on I/O Nitrided Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022
Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Frequency dependant gate oxide TDDB model.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.
Microelectron. Reliab., 2018

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).
Proceedings of the IEEE International Reliability Physics Symposium, 2018

A new method for quickly evaluating reversible and permanent components of the BTI degradation.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016
Noise-induced dynamic variability in nano-scale CMOS SRAM cells.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes.
Proceedings of the 44th European Solid State Device Research Conference, 2014

FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration.
Proceedings of the 44th European Solid State Device Research Conference, 2014

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2009
Process dependence of BTI reliability in advanced HK MG stacks.
Microelectron. Reliab., 2009

2007
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.
Microelectron. Reliab., 2007

2001
Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications.
Microelectron. Reliab., 2001


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