Robert S. Howell

According to our database, Robert S. Howell authored at least 7 papers between 2014 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs.

Akhil S. Kumar, Michael J. Uren, Matthew D. Smith, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process.

Timothy Vasen, Brian Novak, Marc Scimonelli, Kevin Frey, Mustapha Saad, Abbey Saia, Benjamin Grisafe, Ken A. Nagamatsu, Josephine Chang, Virginia Wheeler, Karl D. Hobart, Andrew D. Koehler, Patrick Shea, Stephen Van Campen, Robert S. Howell, Shamima Afroz

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021

Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs.

Jerome T. Mlack, Nick Edwards, Brian Novak, Annaliese Drechsler, Jordan Merkel, Timothy Vasen, Daniel J. Hannan, Paul Brabant, Ishan Wathuthanthri, Justin Parke, Sam Wanis, Robert S. Howell, Ken A. Nagamatsu

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling.

Shamima Afroz, Timothy Vasen, Brian Novak, Ken A. Nagamatsu, Patrick Shea, Sam Wanis, Robert S. Howell, Josephine Chang

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch.

Sourabh Khandelwal, Brian Novak, Jordan Merkel, Ken A. Nagamatsu, Justin Parke, Mark Yu, Patrick Shea, Robert S. Howell

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019

Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance.

Ken A. Nagamatsu, Shamima Afroz, Shalini Gupta, Sam Wanis, Jeffrey Hartman, Eric J. Stewart, Patrick Shea, Karen Renaldo, Robert S. Howell, Brian Novak, Annaliese Drechsler, Josephine Chang, Dale Dawson, Ron Freitag, Kevin Frey, Monique Farrell, Georges Siddiqi

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2014

Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size.

Robert S. Howell, Randall Lewis, H. George Henry, Harold Hearne, Deas Brown, Dale Dawson, Andris Ezis

Microelectron. Reliab., 2014