Sourabh Khandelwal

Orcid: 0000-0001-8833-6462

According to our database1, Sourabh Khandelwal authored at least 21 papers between 2010 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2022
Ultra Compact and Linear 4-bit Digital-to-Analog Converter in 22nm FDSOI Technology.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

ASM-ESD - A comprehensive physics-based compact model for ESD Diodes.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
A Compact Model for SiC Power MOSFETs for Large Current and High Voltage Operation.
CoRR, 2021

2020
An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020

Frequency Behaviour of FeFET-Based Ultra-Low-Power Coupled Oscillator Neurons.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2020

SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
Design methodology considering evolution of statistical corners under long term degradation.
Microelectron. J., 2019

Analog Neuromorphic System Based on Multi Input Floating Gate MOS Neuron Model.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2019

Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTs.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited).
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

Improved Charge Modeling of Field-Plate Enhanced AlGaN/GaN HEMT Devices Using a Physics Based Compact Model.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2017
Full chip power benefits with negative capacitance FETs.
Proceedings of the 2017 IEEE/ACM International Symposium on Low Power Electronics and Design, 2017

2016
Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG.
Microelectron. J., 2016

AC to variable DC(buck and boost) modular multilevel converter using half bridge and full bridge cells.
Proceedings of the IEEE International Conference on Industrial Technology, 2016

2015
Modeling STI Edge Parasitic Current for Accurate Circuit Simulations.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2015

BSIM-CMG: Standard FinFET compact model for advanced circuit design.
Proceedings of the ESSCIRC Conference 2015, 2015

2013
A compact charge-based physical model for AlGaN/GaN HEMTs.
Proceedings of the IEEE Topical Conference on Wireless Sensors and Sensor Networks, 2013

2012
BSIM - Industry standard compact MOSFET models.
Proceedings of the 38th European Solid-State Circuit conference, 2012

2010
Modeling of High Frequency Noise in SOI MOSFETs.
Proceedings of the VLSI Design 2010: 23rd International Conference on VLSI Design, 2010


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