Martin Kuball

According to our database1, Martin Kuball authored at least 12 papers between 2011 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2023
Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020
Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ?
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
On the origin of dynamic R<sub>on</sub> in commercial GaN-on-Si HEMTs.
Microelectron. Reliab., 2018

2017
Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs.
Microelectron. Reliab., 2017

2015
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing.
Microelectron. Reliab., 2015

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence.
Microelectron. Reliab., 2015

2014
Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation.
Microelectron. Reliab., 2014

Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab., 2014

2012
The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability.
Microelectron. Reliab., 2012

Improved thermal management for GaN power electronics: Silver diamond composite packages.
Microelectron. Reliab., 2012

2011
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes.
Microelectron. Reliab., 2011


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