Sanghyun Kang

According to our database, Sanghyun Kang authored at least 3 papers in 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Study of 3-D Line Edge Roughness (LER) in Vertical Channel Array Transistor for DRAM.

Jaehyuk Lim, Seokchan Yoon, Juho Sung, Sanghyun Kang, Gwon Kim, Hyoung Won Baac, Changhwan Shin

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., September, 2025

Device Design Guidelines to Boost Up AC Performance of CFET (Complementary Field-Effect-Transistor)-Based Inverter.

Jaehyuk Lim, Donghwan Han, Juho Sung, Seokchan Yoon, Sanghyun Kang, Gwon Kim, Hyoung Won Baac, Changhwan Shin

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., August, 2025

Comparative Study of Channel Materials for Ferroelectric NAND Applications.

Lance Fernandes, Prasanna Venkatesan Ravindran, Mengkun Tian, Yu-Hsin Kuo, Nashrah Afroze, Salma Soliman, Sanghyun Kang, Dyutimoy Chakraborty, Taeyoung Song, Chengyang Zhang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Khan

Proceedings of the IEEE International Memory Workshop, 2025