Shang-Bin Ko

According to our database, Shang-Bin Ko authored at least 1 paper in 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2011

A 64Mb SRAM in 32nm High-k metal-gate SOI technology with 0.7V operation enabled by stability, write-ability and read-ability enhancements.

Harold Pilo, Igor Arsovski, Kevin Batson, Geordie Braceras, John A. Gabric, Robert M. Houle, Steve Lamphier, Frank Pavlik, Adnan Seferagic, Liang-Yu Chen, Shang-Bin Ko, Carl Radens

Proceedings of the IEEE International Solid-State Circuits Conference, 2011