Kevin Batson

According to our database, Kevin Batson authored at least 4 papers between 2008 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming.

Eric Hunt-Schroeder, Darren Anand, John A. Fifield, Mark Jacunski, Michael Roberge, Dale E. Pontius, Kevin Batson, Toshiaki Kirihata

Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

2012

A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and Read-Ability Enhancements.

Harold Pilo, Igor Arsovski, Kevin Batson, Geordie Braceras, John A. Gabric, Robert M. Houle, Steve Lamphier, Carl Radens, Adnan Seferagic

IEEE J. Solid State Circuits, 2012

2011

A 64Mb SRAM in 32nm High-k metal-gate SOI technology with 0.7V operation enabled by stability, write-ability and read-ability enhancements.

Harold Pilo, Igor Arsovski, Kevin Batson, Geordie Braceras, John A. Gabric, Robert M. Houle, Steve Lamphier, Frank Pavlik, Adnan Seferagic, Liang-Yu Chen, Shang-Bin Ko, Carl Radens

Proceedings of the IEEE International Solid-State Circuits Conference, 2011

2008

An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches.

Leland Chang, Robert K. Montoye, Yutaka Nakamura, Kevin Batson, Richard J. Eickemeyer, Robert H. Dennard, Wilfried Haensch, Damir Jamsek

IEEE J. Solid State Circuits, 2008