Shengjun Qin

According to our database, Shengjun Qin authored at least 5 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Integrating Spatial Self-Attention and Convolution Networks for Improved Car-Sharing Demand Forecasting.

Shengjun Qin, Jiaying Qin, Zhi Liu

IEEE Access, 2024

First Experimental Demonstration of Hybrid Gain Cell Memory with Si PMOS and ITO FET for High-speed On-chip Memory.

Shuhan Liu, Shengjun Qin, Koustav Jana, Jian Chen, Kasidit Toprasertpong, H.-S. Philip Wong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2022

8-Layer 3D Vertical Ru/AlOxNy/TiN RRAM with Mega-Ω Level LRS for Low Power and Ultrahigh-density Memory.

Shengjun Qin, Maryann C. Tung, Emma Belliveau, Shuhan Liu, Jimin Kwon, Wei-Chen Chen, Zizhen Jiang, S. Simon Wong, H.-S. Philip Wong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation.

Sumaiya Wahid, Alwin Daus, Jimin Kwon, Shengjun Qin, Jung-Soo Ko, Krishna C. Saraswat, H.-S. Philip Wong, Eric Pop

Proceedings of the Device Research Conference, 2022

Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties.

Lauren Hoang, Alwin Daus, Sumaiya Wahid, Jimin Kwon, Jung-Soo Ko, Shengjun Qin, Mahnaz Islam, Krishna C. Saraswat, H.-S. Philip Wong, Eric Pop

Proceedings of the Device Research Conference, 2022