Srinivasan Raghavan

Affiliations:
  • Indian Institute of Science, Centre for Nano Science and Engineering (CeNSE), Bangalore, India


According to our database1, Srinivasan Raghavan authored at least 5 papers between 2015 and 2019.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

Legend:

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Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2019
First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis.
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017

2015
Origin of 1/<i>f</i> noise in graphene produced for large-scale applications in electronics.
IET Circuits Devices Syst., 2015


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