Stefania Carapezzi

According to our database, Stefania Carapezzi authored at least 9 papers between 2016 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A mixed-signal oscillatory neural network for scalable analog computations in phase domain.

Corentin Delacour, Stefania Carapezzi, Gabriele Boschetto, Madeleine Abernot, Thierry Gil, Nadine Azémard, Aida Todri-Sanial

Neuromorph. Comput. Eng., September, 2023

How fast can vanadium dioxide neuron-mimicking devices oscillate? Physical mechanisms limiting the frequency of vanadium dioxide oscillators.

Stefania Carapezzi, Andrew Plews, Gabriele Boschetto, Ahmed Nejim, Siegfried F. Karg, Aida Todri

Neuromorph. Comput. Eng., September, 2023

2022

How Frequency Injection Locking Can Train Oscillatory Neural Networks to Compute in Phase.

Aida Todri-Sanial, Stefania Carapezzi, Corentin Delacour, Madeleine Abernot, Thierry Gil, Elisabetta Corti, Siegfried F. Karg, Juan Núñez, Manuel Jiménez Través, Maria J. Avedillo, Bernabé Linares-Barranco

IEEE Trans. Neural Networks Learn. Syst., 2022

2021

Advanced Design Methods From Materials and Devices to Circuits for Brain-Inspired Oscillatory Neural Networks for Edge Computing.

Stefania Carapezzi, Gabriele Boschetto, Corentin Delacour, Elisabetta Corti, Andrew Plews, Ahmed Nejim, Siegfried F. Karg, Aida Todri-Sanial

IEEE J. Emerg. Sel. Topics Circuits Syst., 2021

Multi-Scale Modeling and Simulation Flow for Oscillatory Neural Networks for Edge Computing.

Stefania Carapezzi, Corentin Delacour, Gabriele Boschetto, Elisabetta Corti, Madeleine Abernot, Ahmed Nejim, Thierry Gil, Siegfried F. Karg, Aida Todri-Sanial

Proceedings of the 19th IEEE International New Circuits and Systems Conference, 2021

Oscillatory Neural Networks for Edge AI Computing.

Corentin Delacour, Stefania Carapezzi, Madeleine Abernot, Gabriele Boschetto, Nadine Azémard, Jérémie Salles, Thierry Gil, Aida Todri-Sanial

Proceedings of the IEEE Computer Society Annual Symposium on VLSI, 2021

2019

On the electron mobility of strained InGaAs channel MOSFETs.

Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

3D TCAD modeling of NO2CNT FET sensors.

Stefania Carapezzi, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman, Christofer Hierold, Antonio Gnudi

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016

TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections.

Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani

Proceedings of the 46th European Solid-State Device Research Conference, 2016