Taesub Jung
According to our database1,
Taesub Jung
authored at least 10 papers
between 2011 and 2023.
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Bibliography
2023
A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
Proceedings of the Imaging Sensors and Systems 2021, online, January 11-28, 2021, 2021
2020
A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- $\mu$ m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation.
IEEE J. Solid State Circuits, 2020
A 4-tap global shutter pixel with enhanced IR sensitivity for VGA time-of-flight CMOS image sensors.
Proceedings of the Imaging Sensors and Systems 2020, 2020
2019
A 640×480 Indirect Time-of-Flight CMOS Image Sensor with 4-tap 7-μm Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation Scheme.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
2018
A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9μm unit pixels separated by full-depth deep-trench isolation.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
2014
7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2011
A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011