Changrok Moon
According to our database1,
Changrok Moon
authored at least 12 papers
between 2011 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
6.10 A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2022
2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory.
IEEE J. Solid State Circuits, 2022
A 64Mpixel CMOS Image Sensor with 0.50µm Unit Pixels Separated by Front Deep-Trench Isolation.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
Design and analysis on low-power and low-noise single slope ADC for digital pixel sensors.
Proceedings of the Imaging Sensors and Systems 2022, online, January 15-26, 2022, 2022
2021
A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
Development of Advanced Inter-Color-Filter Grid on Sub-Micron-Pixel CMOS Image Sensor for Mobile Cameras with High Sensitivity and High Resolution.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- $\mu$ m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation.
IEEE J. Solid State Circuits, 2020
A 4-tap global shutter pixel with enhanced IR sensitivity for VGA time-of-flight CMOS image sensors.
Proceedings of the Imaging Sensors and Systems 2020, 2020
2019
A 640×480 Indirect Time-of-Flight CMOS Image Sensor with 4-tap 7-μm Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation Scheme.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
2018
A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9μm unit pixels separated by full-depth deep-trench isolation.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
2011
A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011