Takuya Hoshi

According to our database, Takuya Hoshi authored at least 4 papers between 2016 and 2020.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2020

Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate.

Yuta Shiratori, Takuya Hoshi, Hideaki Matsuzaki

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz <i>f</i>_max and 5.4-V breakdown voltage.

Takuya Hoshi, Norihide Kashio, Yuta Shiratori, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki

IEICE Electron. Express, 2019

2016

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz <i>f</i>_max and 5-V Breakdown Voltage.

Norihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki

IEICE Trans. Electron., 2016

56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodes.

Masahiro Nada, Takuya Hoshi, Shigeru Kanazawa, Toshikazu Hashimoto, Hideaki Matsuzaki

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2016