Norihide Kashio

According to our database1, Norihide Kashio authored at least 5 papers between 2008 and 2019.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2019
InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz <i>f</i><sub>max</sub> and 5.4-V breakdown voltage.
IEICE Electron. Express, 2019

2016
Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz <i>f</i><sub>max</sub> and 5-V Breakdown Voltage.
IEICE Trans. Electron., 2016

2012
Performance of InP/InGaAs HBTs with a Thin Highly <i>N</i>-Type Doped Layer in the Emitter-Base Heterojunction Vicinity.
IEICE Trans. Electron., 2012

2009
Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal.
Microelectron. Reliab., 2009

2008
Highly Reliable Submicron InP-Based HBTs with over 300-GHz <i>f</i><sub>t</sub>.
IEICE Trans. Electron., 2008


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