Hideaki Matsuzaki

According to our database1, Hideaki Matsuzaki authored at least 21 papers between 1999 and 2020.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2020
300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers.
IEEE J. Solid State Circuits, 2020

High Output Power and Compact LAN-WDM EADFB Laser TOSA for 4 × 100-Gbit/s/λ 40-km Fiber-Amplifier-Less Transmission.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2020

Burst-Tolerant λ-Switching of Electro-Optically Tunable Reflection-type Transversal Filter Laser with Single Active Region.
Proceedings of the European Conference on Optical Communications, 2020

Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 V.
Proceedings of the European Conference on Optical Communications, 2020

Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz <i>f</i><sub>max</sub> and 5.4-V breakdown voltage.
IEICE Electron. Express, 2019

300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
Dispersion tolerance of 100-Gbit/s PAM4 optical link utilizing high-speed avalanche photodiode receiver.
IEICE Electron. Express, 2018

106-Gbit/s PAM4 40-km Transmission Using an Avalanche Photodiode With 42-GHz Bandwidth.
Proceedings of the Optical Fiber Communications Conference and Exposition, 2018

2017
Advantages of SOA Assisted Extended Reach EADFB Laser (AXEL) for Operation at Low Power and with Extended Transmission Reach.
IEICE Trans. Electron., 2017

28-Gbit/s 80-km transmission using SOA-assisted extended-reach EADFB laser (AXEL).
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2017

2016
Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz <i>f</i><sub>max</sub> and 5-V Breakdown Voltage.
IEICE Trans. Electron., 2016

56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodes.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2016

2015
High-linearity avalanche photodiode for 40-km transmission with 28-Gbaud PAM4.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2015

2006
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs.
IEICE Trans. Electron., 2006

W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs.
IEICE Trans. Electron., 2006

2004
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors.
IEICE Electron. Express, 2004

Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors.
IEICE Electron. Express, 2004

1999
Ultrahigh-Speed Circuits Using Resonant Tunneling Devices.
Proceedings of the 9th Great Lakes Symposium on VLSI (GLS-VLSI '99), 1999

A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs.
Proceedings of the 9th Great Lakes Symposium on VLSI (GLS-VLSI '99), 1999


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