Yuta Shiratori

According to our database, Yuta Shiratori authored at least 10 papers between 2007 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Beyond 200-GBd QAM Signal Detection Based on Trellis-path-limited Sequence Estimation Supporting Soft-decision Forward Error Correction.

Masanori Nakamura, Hiroki Taniguchi, Shuto Yamamoto, Fukutaro Hamaoka, Munehiko Nagatani, Teruo Jyo, Miwa Mutoh, Yuta Shiratori, Hitoshi Wakita, Takayuki Kobayashi, Hiroyuki Takahashi, Yutaka Miyamoto

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2023

A DC-to-150-GHz InP-DHBT Active Combiner Module for Ultra-Broadband Signal Generation.

Teruo Jyo, Munehiko Nagatani, Miwa Mutoh, Yuta Shiratori, Hitoshi Wakita, Hiroyuki Takahashi

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

110-GHz-Bandwidth InP-HBT AMUX/ADEMUX Circuits for Beyond-1-Tb/s/ch Digital Coherent Optical Transceivers.

Munehiko Nagatani, Hitoshi Wakita, Teruo Jyo, Tsutomu Takeya, Hiroshi Yamazaki, Yoshihiro Ogiso, Miwa Mutoh, Yuta Shiratori, Minoru Ida, Fukutaro Hamaoka, Masanori Nakamura, Takayuki Kobayashi, Hiroyuki Takahashi, Yutaka Miyamoto

Proceedings of the IEEE Custom Integrated Circuits Conference, 2022

A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT.

Teruo Jyo, Hiroshi Hamada, Munehiko Nagatani, Hitoshi Wakita, Ibrahim Abdo, Miwa Mutoh, Yuta Shiratori, Kenichi Okada, Atsushi Shirane, Hiroyuki Takahashi

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021

An Over 130-GHz-Bandwidth InP-DHBT Baseband Amplifier Module.

Teruo Jyo, Munehiko Nagatani, Miwa Mutoh, Yuta Shiratori, Hitoshi Wakita, Hiroyuki Takahashi

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate.

Yuta Shiratori, Takuya Hoshi, Hideaki Matsuzaki

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz <i>f</i>_max and 5.4-V breakdown voltage.

Takuya Hoshi, Norihide Kashio, Yuta Shiratori, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki

IEICE Electron. Express, 2019

2014

Toward Producing 3D Effects That Are Easily Viewed without Eye Strain or Fatigue.

Yuta Shiratori, Takashi Izumi, Keisuke Sano, Yuki Shibuta, Mitsuho Yamada

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2014

2009

Multi-path Switching Device Utilizing a Multi-terminal Nanowire Junction for MDD-Based Logic Circuit.

Seiya Kasai, Yuta Shiratori, Kensuke Miura, Nan-Jian Wu

Proceedings of the ISMVL 2009, 2009

2007

Multiple Path Switching Device Utilizing Size-Controlled Nano-Schottky Wrap Gates for MDD-Based Logic Circuits.

Seiya Kasai, Tatsuya Nakamura, Yuta Shiratori

J. Multiple Valued Log. Soft Comput., 2007