Teng-Hao Yeh

According to our database, Teng-Hao Yeh authored at least 5 papers between 2020 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

A Novel 3D Stacked Vertical-Channel High-Voltage Peripheral Transistor for Largely Scaled the WL Driver Circuit of 1000-layer 3D NAND Flash.

Teng-Hao Yeh, Hang-Ting Lue, Wei-Chen Chen, Keh-Chung Wang, Chih-Yuan Lu

Proceedings of the IEEE International Memory Workshop, 2025

Utilizing 2T SONOS Cell Characteristics for L2/Euclidean Distance Computing - From Unit Cell to Array Operations.

Yu-Hsuan Lin, Po-Hao Tseng, Ming-Hsiu Lee, Yu-Yu Lin, Feng-Min Lee, Dai-Ying Lee, Pei-Ying Du, Chih-Chieh Lin, Teng-Hao Yeh, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu

Proceedings of the IEEE International Memory Workshop, 2025

2022

First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures.

Cheng-Lin Sung, Sheng-Ting Fan, Hang-Ting Lue, Wei-Chen Chen, Pei-Ying Du, Teng-Hao Yeh, Keh-Chung Wang, Chih-Yuan Lu

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances.

Hang-Ting Lue, Tzu-Hsuan Hsu, Cheng-Lin Sung, Teng-Hao Yeh, Keh-Chung Wang, Chih-Yuan Lu

Proceedings of the IEEE International Memory Workshop, 2021

2020

Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution.

Chieh Roger Lo, Teng-Hao Yeh, Wei-Chen Chen, Hang-Ting Lue, Keh-Chung Wang, Chih-Yuan Lu, Yao-Wen Chang, Yung-Hsiang Chen, Chu-Yung Liu

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020