Matteo Borga

According to our database, Matteo Borga authored at least 11 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.

Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology.

Andrea Bettini, Thibault Cosnier, Alessandro Magnani, Olga Syshchyk, Matteo Borga, Stefaan Decoutere, Andrea Neviani

Proceedings of the 17th Conference on Ph.D Research in Microelectronics and Electronics, 2022

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.

M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.

Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications.

Elena Fabris, Matteo Borga, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis.

Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda

Proceedings of the IEEE International Reliability Physics Symposium, 2019

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.

Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.

Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2018