Toshihiko Yoshimasu

According to our database, Toshihiko Yoshimasu authored at least 19 papers between 1998 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS.

Tsuyoshi Sugiura, Toshihiko Yoshimasu

IEICE Trans. Electron., July, 2023

2022

An Ultra-Low-Power Octave-Tuning VCO IC With a Single Analog Voltage-Controlled Novel Varactor.

Mengchu Fang, Toshihiko Yoshimasu

IEEE Trans. Circuits Syst. I Regul. Pap., 2022

2021

A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI.

Toshihiko Yoshimasu, Mengchu Fang, Tsuyoshi Sugiura

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2021

2020

0.3 V 15-GHz Band VCO ICs with Novel Transformer-Based Harmonic Tuned Tanks in 45-nm SOI CMOS.

Xiao Xu, Tsuyoshi Sugiura, Toshihiko Yoshimasu

IEICE Trans. Electron., 2020

A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS.

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

IEICE Trans. Electron., 2020

2019

Ultra-Low Voltage 15-GHz Band Best FoM <-190 dBc/Hz LC-VCO ICs with Novel Harmonic Tuned LC Tank in 45-nm SOI CMOS.

Xiao Xu, Tsuyoshi Sugiura, Toshihiko Yoshimasu

IEICE Trans. Electron., 2019

High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications.

Tsuyoshi Sugiura, Satoshi Furuta, Tadamasa Murakami, Koki Tanji, Norihisa Otani, Toshihiko Yoshimasu

IEICE Trans. Electron., 2019

A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS.

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

Proceedings of the IEEE Radio and Wireless Symposium, 2019

2015

A 5-GHz Band WLAN SiGe HBT Power Amplifier IC with Novel Adaptive-Linearizing CMOS Bias Circuit.

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

IEICE Trans. Electron., 2015

2014

A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect.

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Zheng Sun, Toshihiko Yoshimasu

Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

23Gbps 9.4pJ/bit 80/100GHz band CMOS transceiver with on-board antenna for short-range communication.

Kensuke Nakajima, Akihiro Maruyama, Masato Kohtani, Tsuyoshi Sugiura, Eiichiro Otobe, Jaejin Lee, Shinhee Cho, Kyusub Kwak, Jeongseok Lee, Toshihiko Yoshimasu, Minoru Fujishima

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2014

2012

A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise.

Qing Liu, Jiangtao Sun, Yong-Ju Suh, Nobuyuki Itoh, Toshihiko Yoshimasu

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2012

2011

A 66-dBc Fundamental Suppression Frequency Doubler IC for UWB Sensor Applications.

Jiangtao Sun, Qing Liu, Yong-Ju Suh, Takayuki Shibata, Toshihiko Yoshimasu

IEICE Trans. Electron., 2011

A Broadband High Suppression Frequency Doubler IC for Sub-Millimeter-Wave UWB Applications.

Jiangtao Sun, Qing Liu, Yong-Ju Suh, Takayuki Shibata, Toshihiko Yoshimasu

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2011

A 1.2-3.2 GHz CMOS VCO IC Utilizing Transformer-Based Variable Inductors and AMOS Varactors.

Qing Liu, Yusuke Takigawa, Satoshi Kurachi, Nobuyuki Itoh, Toshihiko Yoshimasu

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2011

2009

15 GHz-band low phase-noise LC-VCO with second harmonic tunable filtering technique.

Qing Liu, Jiangtao Sun, Toshihiko Yoshimasu, Satoshi Kurachi, Nobuyuki Itoh

Proceedings of the IEEE 20th International Symposium on Personal, 2009

2007

A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs.

Satoshi Kurachi, Toshihiko Yoshimasu, Haiwen Liu, Nobuyuki Itoh, Koji Yonemura

IEICE Trans. Electron., 2007

2005

Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications.

Satoshi Kurachi, Toshihiko Yoshimasu

IEICE Trans. Electron., 2005

1998

An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications.

Toshihiko Yoshimasu, Masanori Akagi, Noriyuki Tanba, Shinji Hara

IEEE J. Solid State Circuits, 1998