Trupti Ranjan Lenka

Orcid: 0000-0002-8002-3901

According to our database1, Trupti Ranjan Lenka authored at least 6 papers between 2016 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2023
Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2023

Design of Deep-UV Nanowire LED with Al2O3 Quantum Dots and Step-Graded n-Type AlInGaN Electron Blocking Layer for High Quantum Efficiency.
Proceedings of the 49th Annual Conference of the IEEE Industrial Electronics Society, 2023

2022
Photogeneration losses from interface trap density in Passivated Ultrathin CIGS Solar Cell.
Proceedings of the IECON 2022, 2022

2020
Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study.
IET Circuits Devices Syst., 2020

2018
Compact thermal noise model for enhancement mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands.
IET Circuits Devices Syst., 2018

2016
Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistor.
IET Circuits Devices Syst., 2016


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