Udo Schwalke

According to our database1, Udo Schwalke authored at least 31 papers between 2001 and 2020.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2020
Towards Ambipolar Planar Devices: The DeFET Device in Area Constrained XOR Applications.
Proceedings of the 11th IEEE Latin American Symposium on Circuits & Systems, 2020

2019
The transport and optical sensing properties of Blue Phosphorene: A First-Principles Study.
Proceedings of the 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2019

Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing.
Proceedings of the 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2019

From MOSFETs to Ambipolar Transistors: A Static DeFET Inverter Cell for SOI.
Proceedings of the 2019 IEEE Asia Pacific Conference on Circuits and Systems, 2019

2018
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection.
Proceedings of the 25th International Conference "Mixed Design of Integrated Circuits and System", 2018

Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices.
Proceedings of the 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2018

Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
Proceedings of the 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2018

2017
Simulation framework for barrier lowering in Schottky barrier MOSFETs.
Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017

Feasibility study of in-situ grown nanocrystalline graphene for humidity sensing.
Proceedings of the 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2017

Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS.
Proceedings of the 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2017

2016
Investigation of transfer-free catalytic CVD graphene on SiO2 by means of conductive atomic force microscopy.
Proceedings of the 2016 International Conference on Design and Technology of Integrated Systems in Nanoscale Era, 2016

PMMA-enhancement of the lateral growth of transfer-free in situ CCVD grown graphene.
Proceedings of the 13th International Multi-Conference on Systems, Signals & Devices, 2016

Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS.
Proceedings of the 13th International Multi-Conference on Systems, Signals & Devices, 2016

2015
Silicon CMOS compatible in situ CCVD growth of graphene on silicon nitride.
Proceedings of the 10th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2015

2014
2nd generation bilayer graphene transistors for applications in nanoelectronics.
Proceedings of the 9th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2014

An electrostatically doped planar device concept.
Proceedings of the 9th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2014

Dependence of annealing temperature on cluster formation during in situ growth of CNTs.
Proceedings of the 9th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2014

2013
Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs.
Microelectron. J., 2013

Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material.
Proceedings of the 8th International Design and Test Symposium, 2013

Transfer-free grown bilayer graphene memory devices.
Proceedings of the 8th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2013

Multi-CNTFETs for power device applications: Investigation of CCVD grown CNTs by means of atomic force microscopy.
Proceedings of the 8th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2013

The future of nanoelectronics is black: From silicon to hexagonal carbon.
Proceedings of the AFRICON 2013, Pointe aux Piments, Mauritius, September 9-12, 2013, 2013

2012
On/off-current ratios of transfer-free bilayer graphene FETs as a function of temperature.
Proceedings of the 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012

Dopant-free CMOS: A new device concept.
Proceedings of the 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012

Nanoelectronics: From silicon to graphene.
Proceedings of the 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012

Feasibility study on in situ CCVD grown CNTs for field-effect power device applications.
Proceedings of the 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012

2008
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomedical Sensor Applications.
Proceedings of the First International Conference on Biomedical Electronics and Devices, 2008

2007
Electrical characterization of crystalline Gd<sub>2</sub>O<sub>3</sub> gate dielectric MOSFETs fabricated by damascene metal gate technology.
Microelectron. Reliab., 2007

2005
Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics.
Microelectron. Reliab., 2005

2001
Ultra-thick gate oxides: charge generation and its impact on reliability.
Microelectron. Reliab., 2001

Progress in device isolation technology.
Microelectron. Reliab., 2001


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