Martin Kerber

According to our database, Martin Kerber authored at least 8 papers between 2001 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

Reliability aspects of copper metallization and interconnect technology for power devices.

Frank Hille, Roman Roth, Carsten Schäffer, Holger Schulze, Nicolas Heuck, Daniel Bolowski, Karsten Guth, Alexander Ciliox, Karina Rott, Frank Umbach, Martin Kerber

Microelectron. Reliab., 2016

2007

Reliability screening of high-k dielectrics based on voltage ramp stress.

A. Kerber, Luigi Pantisano, Anabela Veloso, Guido Groeseneken, Martin Kerber

Microelectron. Reliab., 2007

Reliability aspects of Hf-based capacitors: Breakdown and trapping effects.

Rainer Duschl, Martin Kerber, A. Avellan, S. Jakschik, Uwe Schroeder, S. Kudelka

Microelectron. Reliab., 2007

2006

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides.

T. Pompl, A. Kerber, M. Röhner, Martin Kerber

Microelectron. Reliab., 2006

2001

Ultra-thick gate oxides: charge generation and its impact on reliability.

Udo Schwalke, Martin Pölzl, Thomas Sekinger, Martin Kerber

Microelectron. Reliab., 2001

Soft breakdown and hard breakdown in ultra-thin oxides.

T. Pompl, C. Engel, H. Wurzer, Martin Kerber

Microelectron. Reliab., 2001

The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices.

G. Innertsberger, T. Pompl, Martin Kerber

Microelectron. Reliab., 2001

Quality assessment of thin oxides using constant and ramped stress measurements.

Gunnar Diestel, Andreas Martin, Martin Kerber, Alfred Schlemm, Horst Erlenmaier, Bernhard Murr, Andreas Preussger

Microelectron. Reliab., 2001