Valeria Bragaglia

According to our database, Valeria Bragaglia authored at least 11 papers between 2020 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

All-in-One Analog AI Accelerator: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices.

Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon-Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia

CoRR, February, 2025

Edge Training and Inference with Analog ReRAM Technology for Hand Gesture Recognition.

Victoria Clerico, Anirvan Dutta, Donato Francesco Falcone, Wooseok Choi, Matteo Galetta, Tommaso Stecconi, András Horváth, Shokoofeh Varzandeh, Bert Jan Offrein, Mohsen Kaboli, Valeria Bragaglia

Proceedings of the IEEE International Symposium on Circuits and Systems, 2025

Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory Tasks.

Wooseok Choi, Thomas van Bodegraven, Jelle Verest, Olivier Maher, Donato Francesco Falcone, Antonio La Porta, Daniel Jubin, Bert J. Offrein, Siegfried F. Karg, Valeria Bragaglia, Aida Todri-Sanial

Proceedings of the IEEE International Memory Workshop, 2025

2024

Highly Reproducible and CMOS-compatible VO2-based Oscillators for Brain-inspired Computing.

Olivier Maher, Roy Bernini, Nele Harnack, Bernd Gotsmann, Marilyne Sousa, Valeria Bragaglia, Siegfried F. Karg

CoRR, 2024

Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices.

Davide G. F. Lombardo, Mamidala Saketh Ram, Tommaso Stecconi, Wooseok Choi, Antonio La Porta, Donato Francesco Falcone, Bert J. Offrein, Valeria Bragaglia

Proceedings of the Device Research Conference, 2024

2023

A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory.

Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Youri Popoff, Valeria Bragaglia, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein

CoRR, 2023

Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM.

Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia

Proceedings of the IEEE International Memory Workshop, 2023

2022

Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM.

Tommaso Stecconi, Youri Popoff, Roberto Guido, Donato Francesco Falcone, Mattia Halter, Marilyne Sousa, Folkert Horst, Antonio La Porta, Bert J. Offrein, Valeria Bragaglia

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states.

Tommaso Stecconi, Youri Popoff, Roberto Guido, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia

Proceedings of the Device Research Conference, 2022

2021

A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory.

Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Valeria Bragaglia, Youri Popoff, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert J. Offrein

Proceedings of the IEEE International Memory Workshop, 2021

2020

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights.

Mattia Halter, Laura Bégon-Lours, Valeria Bragaglia, Marilyne Sousa, Bert Jan Offrein, Stefan Abel, Mathieu Luisier, Jean Fompeyrine

CoRR, 2020